Title :
Single Event and Low Dose-Rate TID Effects in the DS16F95 RS-485 Transceiver
Author :
Kelly, Andrew T. ; Fleming, Patrick R. ; Brown, Ronald D. ; Wong, Frankie
Author_Institution :
BAE Syst. Space Products & Syst., Manassas, VA, USA
Abstract :
Characterization of single event and low dose-rate TID effects in National Semiconductor´s DS16F95 Radiation-Hardened RS-485 Transceiver is eported. Onset LET for upsetof less than 5 MeV-cm2/mg was observed, and a dependency on operating condition was established. Samples under ELDRS nvestigation adhered to electrical specification after irradiation to 30 krd(Si) at 10 mrd(Si)/s.
Keywords :
transceivers; DS16F95 RS-485 transceiver; Onset LET; TID effects; Driver circuits; Monitoring; Radiation effects; Receivers; Temperature measurement; Testing; Transient analysis;
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2010 IEEE
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-8405-8
DOI :
10.1109/REDW.2010.5619503
