• DocumentCode
    2817713
  • Title

    The Effects of ELDRS at Ultra-Low Dose Rates

  • Author

    Chen, Dakai ; Forney, James D. ; Pease, Ronald L. ; Phan, Anthony M. ; Carts, Martin A. ; Cox, Stephen R. ; Kruckmeyer, Kirby ; Burns, Sam ; Albarian, Rafi ; Holcombe, Bruce ; Little, Bradley ; Salzman, James ; Chaumont, Geraldine ; Duperray, Herve ; Ouel

  • Author_Institution
    MEI Technol. Inc., Greenbelt, MD, USA
  • fYear
    2010
  • fDate
    20-23 July 2010
  • Firstpage
    6
  • Lastpage
    6
  • Abstract
    We present results on the effects on ELDRS at dose rates of 10, 5, 1, and 0.5 mrad(Si)/s for a variety of radiation hardened and commercial devices. We observed low dose rate enhancement below 10 mrad(Si)/s in several different parts. The magnitudes of the dose rate effects vary. The TL750L, a commercial voltage regulator, showed dose rate dependence in the functional failures, with initial failures occurring after 10 krad(Si) for the parts irradiated at 0.5 mrad(Si)/s. The RH1021 showed an increase in low dose rate enhancement by 2X at 5 mrad(Si)/s relative to 8 mrad(Si)/s and high dose rate, and parametric failure after 100 krad(Si). Additionally the ELDRS-free devices, such as the LM158 and LM117, showed evidence of dose rate sensitivity in parametric degradations. Several other parts also displayed dose rate enhancement, with relatively lower degradations up to ~ 15 to 20 krad(Si). The magnitudes of the dose rate enhancement will likely increase in significance at higher total dose levels.
  • Keywords
    voltage regulators; ELDRS; commercial device; commercial voltage regulator; dose rate dependence; dose rate enhancement; dose rate sensitivity; enhanced low dose rate sensitivity; parametric degradation; parametric failure; ultra low dose rates; Degradation; Metals; Operational amplifiers; Pins; Radiation effects; Regulators; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop (REDW), 2010 IEEE
  • Conference_Location
    Denver, CO
  • ISSN
    2154-0519
  • Print_ISBN
    978-1-4244-8405-8
  • Type

    conf

  • DOI
    10.1109/REDW.2010.5619506
  • Filename
    5619506