Title :
Highly-selective dry etching of InAlAs over InGaAs assisted by ArF excimer laser
Author :
Takazawa, Hiroyuki ; Takatani, Shinichiro
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
Highly selective etching of InAlAs over InGaAs by ArF excimer laser with Cl2 gas was demonstrated. The etching rate of InAlAs relative to that of InGaAs increased as the laser fluence decreased and the Cl2 pressure increased, and the highest observed etching rate ratio exceeded 70. The very fast InAlAs etching rate is speculated to be due to the higher reactivity of Al than that of Ga
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser beam etching; photochemistry; plasma chemistry; reaction rate constants; semiconductor heterojunctions; sputter etching; surface chemistry; ArF; ArF excimer laser; Cl2; Cl2 gas; Cl2 pressure; InAlAs; InAlAs-InGaAs; InGaAs; etching rate; etching rate ratio; highly-selective dry etching; laser fluence; reactivity; Dry etching; Gallium arsenide; Gas lasers; HEMTs; Indium compounds; Indium gallium arsenide; MODFETs; Plasma applications; Plasma devices; Semiconductor lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712432
