Title :
Comparison of TID Response of Micron Technology Single-Level Cell High Density NAND Flash Memories
Author :
Nguyen, Duc N. ; Irom, Farokh
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
Total ionizing dose (TID) response for Micron Technology single-level cell (SLC) 1 Gb, 2 Gb, 4 Gb and 8 Gb NAND flash memories are reported. Scaling effects in TID response is discussed. Floating gates bit error scales with feature size. Also, charge pump TID degradation and standby current improves with scaling.
Keywords :
NAND circuits; flash memories; radiation effects; Micron Technology single-level cell; TID; floating gates bit error scale; high density NAND flash memories; scaling effect; total ionizing dose; Charge pumps; Computer architecture; Current measurement; Flash memory; Microprocessors; Nonvolatile memory; Radiation effects;
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2010 IEEE
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-8405-8
DOI :
10.1109/REDW.2010.5619508
