• DocumentCode
    2817759
  • Title

    Dry etching process in InP Gunn device technology utilizing inductively coupled plasma (ICP) system

  • Author

    Liu, J.Q. ; Zybura, M.F. ; Pao, Y.C. ; Westerman, R. ; Constantine, C.

  • Author_Institution
    Santa Clara Univ., CA, USA
  • fYear
    1998
  • fDate
    11-15 May 1998
  • Firstpage
    187
  • Lastpage
    190
  • Abstract
    In this paper we report on recent progress in 77 GHz InP Gunn device process development. Specifically, utilizing recent advances in the dry etching of InP to define Gunn diode active layer mesas. Unlike previous FeCl3-based photochemical etches, the inductively coupled plasma (ICP) system offers excellent sidewall anisotropy and uniformity. This provides enhanced DC and RF consistency facilitating mass manufacturing of millimeter wave Gunn oscillators
  • Keywords
    Gunn diodes; Gunn oscillators; III-V semiconductors; indium compounds; millimetre wave oscillators; sputter etching; 77 GHz; Gunn diode active layer mesas; ICP system; InP; InP Gunn device technology; dry etching process; inductively coupled plasma system; millimeter wave Gunn oscillators; sidewall anisotropy; uniformity; Anisotropic magnetoresistance; Diodes; Dry etching; Gunn devices; Indium phosphide; Photochemistry; Plasma applications; Plasma devices; Plasma materials processing; Plasma waves;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1998 International Conference on
  • Conference_Location
    Tsukuba
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-4220-8
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1998.712433
  • Filename
    712433
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2817759