Title :
Highly controllable electrochemical etching of InP studied by voltammetry and scanned probe microscope
Author :
Kaneshiro, Chinami ; Sato, Taketomo ; Segawa, Hideki Ha
Author_Institution :
Res. Center for Interface Quantum Electron., Hokkaido Univ., Sapporo, Japan
Abstract :
Electrochemical etching of n-InP surfaces is studied by using voltammetry, XPS, in situ electrochemical STM, ex situ AFM and SEM measurements in order to characterize and optimize the etching process. The voltammograms indicated occurrence of the active-passive transition. The surfaces etched by the optimal anodic condition were clean and featureless with an rms roughness of 2.5 nm, whereas the surfaces obtained in the passive region were porous. The optimum avalanche pulse etching mode realized an extremely high etch depth controllability of 6×10-5 nm/pulse
Keywords :
III-V semiconductors; X-ray photoelectron spectra; anodisation; atomic force microscopy; electrochemistry; etching; indium compounds; passivation; porous semiconductors; scanning electron microscopy; surface chemistry; surface topography; voltammetry (chemical analysis); InP; SEM; XPS; active-passive transition; etching process; ex situ AFM; high etch depth controllability; highly controllable electrochemical etching; in situ electrochemical STM; n-InP surfaces; optimum avalanche pulse etching mode; passive region; porous layer; rms roughness; scanned probe microscopy; voltammetry; voltammograms; Atomic force microscopy; Controllability; Counting circuits; Electrodes; Etching; Indium phosphide; Probes; Rough surfaces; Scanning electron microscopy; Surface cleaning;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712434
