Power-handling capability of W-band InGaAs pin diode switches

Author

Alekseev, Egor ; Cui, Delong ; Pavlidis, Dimitris

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

1998

fDate

11-15 May 1998

Firstpage

199

Lastpage

202

Abstract

The power-handling capability of InGaAs pin diodes is reported and compared to that of GaAs pin diodes. The trade-off between power handling, high frequency performance, and bias conditions is considered. W-band InGaAs pin diode monolithic switches were fabricated using coplanar-waveguide technology, and their large-signal characteristics measured using a W-band load-pull characterization system are reported for the first time

Keywords

III-V semiconductors; coplanar waveguide components; gallium arsenide; indium compounds; microwave switches; millimetre wave diodes; p-i-n diodes; power semiconductor diodes; power semiconductor switches; 70 to 80 GHz; InGaAs; W-band InGaAs pin diode monolithic switches; W-band InGaAs pin diode switches; W-band load-pull characterization system; bias conditions; coplanar-waveguide technology; high frequency performance; large-signal characteristics; power-handling capability; Content addressable storage; Diodes; Frequency; Gold; HEMTs; Indium gallium arsenide; Insertion loss; MODFETs; Parasitic capacitance; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712436

Filename

712436