Title :
A Physics-Based TCAD Framework for the Noise Analysis of RF CMOS Circuits under the Large-Signal Operation
Author :
Hong, Sung-Min ; Kim, Raseong ; Min, Hong Shick ; Young-June Park ; Park, Young-June
Author_Institution :
School of Electrical Engineering and Computer Science and NSI-NCRC, Seoul National University, Seoul 151-744, Korea. E-mail: hi2ska2@isis.snu.ac.kr
Abstract :
A general TCAD framework for the large-signal (LS) noise analysis of RF CMOS circuits has been developed employing an efficient preconditioner for generalized minimal residual (GMRES) method. In this framework the influence of the noise sources inside the devices on the output noise of the circuit is calculated using the conversion Green´s function (CGF) technique. We expect that the newly-developed TCAD framework can provide a physics-based and efficient LS noise analysis under a mixed device-circuit environment. As an application, noise behaviors of a single-balanced down-conversion mixer has been simulated using this framework.
Keywords :
Analytical models; CMOS technology; Circuit noise; Circuit simulation; Green´s function methods; Poisson equations; Radio frequency; Semiconductor device noise; Voltage; Working environment noise;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN :
4-9902762-0-5
DOI :
10.1109/SISPAD.2005.201487