Title :
Compact Modeling of Source-Side Injection Programming for 9Onm-Node AG-AND Flash Memory
Author :
Sonoda, Kenichiro ; Narumi, Shunichi ; Tanizawa, Motoaki ; Ishikawa, Kiyoshi ; Eimori, Takahisa ; Ohji, Yuzuru ; Kurata, Hideaki
Author_Institution :
Production and Technology Unit, Renesas Technology Corp., Mizuhara 4-1, Itami, Hyogo 664-8641, Japan. E-mail: kenichiro.sonoda@renesas.com
Abstract :
A compact model of source-side injection programming for AG-AND flash memory is presented. The lucky-electron model is used to formulate the hot electron injection current for programming. The lateral electric field is estimated using the pseudo-two-dimensional model considering the offset length between the assist-gate and the floating-gate. The proposed model is verified with device simulation and measurement results of 90nm-node AG-AND flash memory.
Keywords :
Cellular phones; Channel hot electron injection; Digital cameras; Electrodes; Electronic mail; Flash memory; Hot carriers; Nonvolatile memory; Production; Secondary generated hot electron injection;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN :
4-9902762-0-5
DOI :
10.1109/SISPAD.2005.201488
