Title :
New millimetre wave devices [HEMT]
Author :
Davies, R. ; Myers, F.A.
Author_Institution :
Plessey Res. & Technol., Caswell, UK
Abstract :
Summary form only given. The authors review the principles and performance of the high electron mobility transistor (HEMT). By allying modern material growth techniques with advances in device physics, low noise performance is demonstrated from this structure up to 94 GHz
Keywords :
electron device noise; high electron mobility transistors; solid-state microwave devices; 94 GHz; HEMT; device physics; high electron mobility transistor; material growth; millimetre wave devices; noise performance;
Conference_Titel :
Radiocommunication in the Range 30-60 GHz, IEE Colloquium on
Conference_Location :
London
