DocumentCode
281794
Title
New millimetre wave devices [HEMT]
Author
Davies, R. ; Myers, F.A.
Author_Institution
Plessey Res. & Technol., Caswell, UK
fYear
1989
fDate
32611
Firstpage
42552
Abstract
Summary form only given. The authors review the principles and performance of the high electron mobility transistor (HEMT). By allying modern material growth techniques with advances in device physics, low noise performance is demonstrated from this structure up to 94 GHz
Keywords
electron device noise; high electron mobility transistors; solid-state microwave devices; 94 GHz; HEMT; device physics; high electron mobility transistor; material growth; millimetre wave devices; noise performance;
fLanguage
English
Publisher
iet
Conference_Titel
Radiocommunication in the Range 30-60 GHz, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
198234
Link To Document