W-band high gain passivated 0.15 μm InP-based HEMTs MMIC technology with high thermal stability on InP substrates

Author

Chertouk, M. ; Steinhagen, F. ; Massler, H. ; Dammann, M. ; Haydl, W.H. ; Kohler, K. ; Weimann, G.

Author_Institution

Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany

fYear

1998

fDate

11-15 May 1998

Firstpage

227

Lastpage

230

Abstract

InP-based HEMTs have to date demonstrated the best high frequency characteristics of any transistor, including the highest f_t and f_max, the lowest noise figure and the highest efficiencies for power amplification. These characteristics make this technology the best choice for advanced systems for space and military applications such as smart munitions, passive imaging and radiometry, and commercial applications such as automotive radar. Unfortunately, the relative immaturity of InP-based HEMT processing technology, in comparison to that of GaAs based PHEMTs, limits its introduction into systems. Consequently, much effort is being directed towards the development of reliability and manufacturability of the InP-based HEMT MMICs. In this paper, we demonstrate the fabrication and the design of W-band high gain passivated 0.15 μm double side doped InAlAs/InGaAs HEMTs with low feed-back capacitance, and high uniformity and yield over 2" InP substrates. An explanation of the physical origin of the gate-drain feed-back capacitance is given. Furthermore, the robustness of our InP-based HEMT technology is demonstrated by high temperature stress

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; distributed amplifiers; field effect MIMIC; gallium arsenide; high electron mobility transistors; high-temperature electronics; indium compounds; integrated circuit reliability; millimetre wave amplifiers; passivation; thermal stability; 0.15 mum; 10.2 dB; 11 dB; 2 inch; 88 GHz; 89 GHz; HEMT; InAlAs-InGaAs; InP; InP substrates; MMIC technology; W-band high gain passivated transistor; four-stage distributed amplifier; gate-drain feed-back capacitance; high temperature stress; single stage amplifier; thermal stability; uniformity; Capacitance; Frequency; HEMTs; MMICs; MODFETs; Noise figure; Radiometry; Space technology; Transistors; Weapons;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712443

Filename

712443