Title :
Fully quaternary In0.52(Al1-xGax) 0.48As/In0.53(AlxGa1-x) 0.47As (x=0.1, 0.2) heterostructures on InP for HFETs
Author :
Lai, L.S. ; Chan, Y.-J. ; Pan, J.W. ; Chyi, J.-I.
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
Abstract :
A fully quaternary (FQ-) In0.52(Al1-xGax)0.48As/In 0.53(AlxGa1-x)0.47As (x=0.1, 0.2) heterostructure was introduced into doped-channel FETs (FQ-DCFETs) on InP substrates. Based on our previous studies, we observed that by adding a small amount of Ga (10%) atoms into the InAlAs Schottky and buffer layers in the HEMT structure, device performance can be enhanced due to a better quality of InAlGaAs material. Furthermore, by adding a small amount of Al (10% or 20%) atoms into the InGaAs channel layers, the associated impact ionization process can be suppressed in this InAlGaAs channel, resulting in an enhancement of breakdown voltage. Therefore, in this report, we combined both techniques to realize the fully quaternary HFETs and characterize their performance
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; semiconductor device breakdown; HEMT structure; HFET; In0.52(AlGa)0.48As-In0.53(AlGa) 0.47As; InP; InP substrates; breakdown voltage; buffer layers; doped-channel FET; heterostructures; impact ionization; Atomic layer deposition; Atomic measurements; Calibration; Equations; FETs; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Photonic band gap; Schottky diodes;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712444
