DocumentCode
2817966
Title
Fully quaternary In0.52(Al1-xGax) 0.48As/In0.53(AlxGa1-x) 0.47As (x=0.1, 0.2) heterostructures on InP for HFETs
Author
Lai, L.S. ; Chan, Y.-J. ; Pan, J.W. ; Chyi, J.-I.
Author_Institution
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
fYear
1998
fDate
11-15 May 1998
Firstpage
231
Lastpage
234
Abstract
A fully quaternary (FQ-) In0.52(Al1-xGax)0.48As/In 0.53(AlxGa1-x)0.47As (x=0.1, 0.2) heterostructure was introduced into doped-channel FETs (FQ-DCFETs) on InP substrates. Based on our previous studies, we observed that by adding a small amount of Ga (10%) atoms into the InAlAs Schottky and buffer layers in the HEMT structure, device performance can be enhanced due to a better quality of InAlGaAs material. Furthermore, by adding a small amount of Al (10% or 20%) atoms into the InGaAs channel layers, the associated impact ionization process can be suppressed in this InAlGaAs channel, resulting in an enhancement of breakdown voltage. Therefore, in this report, we combined both techniques to realize the fully quaternary HFETs and characterize their performance
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; semiconductor device breakdown; HEMT structure; HFET; In0.52(AlGa)0.48As-In0.53(AlGa) 0.47As; InP; InP substrates; breakdown voltage; buffer layers; doped-channel FET; heterostructures; impact ionization; Atomic layer deposition; Atomic measurements; Calibration; Equations; FETs; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Photonic band gap; Schottky diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location
Tsukuba
ISSN
1092-8669
Print_ISBN
0-7803-4220-8
Type
conf
DOI
10.1109/ICIPRM.1998.712444
Filename
712444
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