DocumentCode
2817973
Title
Dynamic Mesh Adaptation for Three-Dimensional Electromigration Simulation
Author
Wessner, W. ; Ceric, H. ; Cervenka, J. ; Selberherr, S.
Author_Institution
Institute for Microelectronics, TU Vienna, Guβhausstraβe 27-29/E360, 1040 Wien, Austria. Phone: +43-1-58801/36031, Fax: +43-1-58801/36099, E-mail: wessner@iue.tuwien.ac.at
fYear
2005
fDate
01-03 Sept. 2005
Firstpage
147
Lastpage
150
Abstract
It is well known that the simulation of time-to-failure for copper (Cu) metal lines requires modeling of vacancy electromigration as well as void nucleation, growth, and movement. Because of the complexity of this problem, different approximate approaches to the physical formulation and solution appear in the literature. Based on our work for two-dimensional electromigration induced void migration and our experience on mesh adaptation techniques we present a computational method for three dimensional tetrahedral mesh refinement and hierarchical coarsement according to the demands of advanced electromigration simulation.
Keywords
Computational modeling; Conducting materials; Copper; Current density; Electromigration; Electrons; Equations; Finite element methods; Grain boundaries; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN
4-9902762-0-5
Type
conf
DOI
10.1109/SISPAD.2005.201494
Filename
1562046
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