DocumentCode
28180
Title
Reduced Threshold Current in NbO2 Selector by Engineering Device Structure
Author
Xinjun Liu ; Nandi, Sanjoy Kumar ; Venkatachalam, Dinesh Kumar ; Belay, Kidane ; Song, Seunghyun ; Elliman, Robert Glen
Author_Institution
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Volume
35
Issue
10
fYear
2014
fDate
Oct. 2014
Firstpage
1055
Lastpage
1057
Abstract
The leakage current scaling issues for NbO2 selector devices are investigated. By introducing a rough Pt bottom electrode (BE) (RMS roughness ~2.5 nm) and inserting a 20-nm-thick dielectric layer (Nb2O5 and HfO2) between the BE and NbO2 layer, we show that the threshold current for the insulator-metal-transition in microscale devices (~150 μm) can be reduced to ~20 μA, close to that realized in nanoscale (~10 nm) 3-D vertical ReRAM. This could be attributed to a thermal confinement effect caused by the presence of a permanent conductive filament in dielectric layer. The experimental results are supported by finite element simulation.
Keywords
conducting materials; dielectric devices; dielectric materials; electrochemical electrodes; finite element analysis; hafnium compounds; leakage currents; niobium compounds; platinum; random-access storage; 3D vertical ReRAM; BE; Pt-Nb2O5-HfO2-NbO2; dielectric layer; engineering device structure; finite element simulation; insulator-metal-transition; microscale device; permanent conductive filament; reduced threshold leakage current scaling issue; rough bottom electrode; selector device; size 20 nm; thermal confinement effect; Dielectrics; Electrodes; Hafnium compounds; Materials; Nanoscale devices; Switches; Threshold current; Non-volatile memory; cross-point memory; cross-point memory.; niobium oxide; resistive switching; threshold switching;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2014.2344105
Filename
6878476
Link To Document