InP light emitting diodes on Si substrates integrated with back-surface diffractive lenses

Author

Wada, Hiroshi ; Sasaki, Hironori ; Kamijoh, Takeshi

Author_Institution

Opt. Interconnection Oki Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan

fYear

1998

fDate

11-15 May 1998

Firstpage

239

Lastpage

242

Abstract

We have fabricated 1.55-μm InGaAsP/InP light emitting diodes (LEDs) on Si integrated with back-surface diffractive lenses. The LEDs were fabricated on Si by wafer bonding and the binary diffractive lenses were integrated on back-surface of the Si substrates by photolithography and reactive ion etching. LED light emitted from the Si back-surface was observed to be collimated with a diffraction efficiency of about 35%, which is close to the theoretical limit of the binary diffractive lens. This integrated device will facilitate the implementation of optical interconnects in advanced VLSI systems

Keywords

III-V semiconductors; VLSI; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; lenses; light emitting diodes; optical interconnections; photolithography; sputter etching; wafer bonding; 1.55 mum; InGaAsP-InP; LED; Si; Si substrates; advanced VLSI systems; back-surface diffractive lenses; diffraction efficiency; optical interconnects; photolithography; reactive ion etching; wafer bonding; Etching; Indium phosphide; Lenses; Light emitting diodes; Lithography; Optical collimators; Optical diffraction; Optical interconnections; Very large scale integration; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712446

Filename

712446