DocumentCode
2818065
Title
Effect of carrier dynamics on quantum-dot laser performance
Author
Sugawara, Mitsuru
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
fYear
1998
fDate
11-15 May 1998
Firstpage
254
Lastpage
257
Abstract
The purpose of this work is to study the effect of carrier dynamics on quantum-dot laser performance. The simulation using carrier-photon rate equations clarifies criteria on the carrier relaxation lifetime as well as the inhomogeneous broadening linewidth and the crystal quality to achieve high-performance. The relaxation lifetime forms a hierarchy in quantum-dot lasers, i.e., what performance we can expect strongly depends on the relaxation lifetime
Keywords
III-V semiconductors; carrier lifetime; gallium arsenide; indium compounds; quantum well lasers; semiconductor quantum dots; InGaAs-GaAs; carrier dynamics; carrier relaxation lifetime; carrier-photon rate equations; crystal quality; inhomogeneous broadening linewidth; laser performance; quantum-dot laser; Equations; Phonons; Photonic crystals; Quantum dot lasers; Quantum dots; Quantum well lasers; Quantum wells; Radiative recombination; Spontaneous emission; Stationary state;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location
Tsukuba
ISSN
1092-8669
Print_ISBN
0-7803-4220-8
Type
conf
DOI
10.1109/ICIPRM.1998.712450
Filename
712450
Link To Document