New method for reduction of carrier lifetime in semiconductor optical amplifier using assist light

Author

Tsurusawa, Munefumi ; Usami, Masashi ; Matsushima, Yuichi

Author_Institution

KDD Kamifukuoka R&D Labs., Saitama, Japan

fYear

1998

fDate

11-15 May 1998

Firstpage

258

Lastpage

261

Abstract

We propose a novel method for reducing the absorption recovery time in an SOA which acts as saturable absorber. The reduction of the recovery time was successfully demonstrated by stimulated recombination due to a CW additional light (assist light). We also optimize the injection current and the wavelength of the assist light for the reduction effect. The obtained minimum recovery time was less than 50 ps. This method can be applied to ultra-high repetition-rate all optical processing

Keywords

III-V semiconductors; carrier lifetime; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; optical saturable absorption; semiconductor optical amplifiers; InGaAsP; absorption recovery time; all optical processing; assist light; carrier lifetime; injection current; saturable absorber; semiconductor optical amplifier; stimulated recombination; Absorption; Charge carrier lifetime; High speed optical techniques; Laser excitation; Optical pumping; Radiative recombination; Semiconductor optical amplifiers; Spontaneous emission; Steady-state; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712451

Filename

712451