Design and fabrication of a waveguide photodiode for 1.55-μm band access receivers

Author

Takeuchi, T. ; Nakata, T. ; Tachigori, M. ; Makita, E. ; Taguchi, E.

Author_Institution

NEC Optoelectron. & High Frequency Dev. Res. Lab., Ibaraki, Japan

fYear

1998

fDate

11-15 May 1998

Firstpage

262

Lastpage

265

Abstract

A waveguide photodiode that can be used in 1.55-μm-band access receivers was designed and fabricated. We simulated the optical coupling characteristics, focusing especially on the external quantum efficiency and coupling tolerance for different input spot sizes and for different waveguide-layer structures. The results clearly showed that both high efficiency and high tolerance can be obtained in an optimized symmetric structure for a hemispherically ended fiber. The fabricated device, optimized in the basis of the simulation, showed excellent characteristics such as an external quantum efficiency of more than 95% and a coupling tolerance of 6.5 μm in the vertical direction

Keywords

infrared detectors; integrated optoelectronics; optical design techniques; optical fabrication; optical fibre couplers; optical planar waveguides; optical receivers; photodiodes; 1.55 mum; 1.55-μm band access receivers; 95 percent; coupling tolerance; design; external quantum efficiency; fabrication; hemispherically ended fiber; input spot sizes; optical coupling characteristics; optimized symmetric structure; waveguide photodiode; waveguide-layer structures; Assembly; Optical coupling; Optical device fabrication; Optical fiber devices; Optical planar waveguides; Optical receivers; Optical waveguides; Photodiodes; Planar waveguides; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712452

Filename

712452