Title :
GaInAsP/InP attenuator integrated waveguide photodetector (AIPD) based on the Franz-Keldysh effect
Author :
Yokouchi, N. ; Yoshida, J. ; Yamanaka, N. ; Yamaguchi, T. ; Nishikata, K.
Author_Institution :
R&D Lab., Furukawa Electr. Co. Ltd., Yokohama, Japan
Abstract :
A waveguide photodetector monolithically integrated with an optical attenuator based on the Franz-Keldysh effect at the input section is proposed. The intrinsic sensitivity of the device without attenuation is 0.25 A/W. The effective sensitivity is reduced by applying the reverse bias at the attenuator section. The largest variable sensitivity range of 11 dB is realized at the reverse bias of 32 V
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical planar waveguides; photodetectors; Franz-Keldysh effect; GaInAsP-InP; attenuator integrated waveguide photodetector; reverse bias; sensitivity; Indium phosphide; Optical attenuators; Optical coupling; Optical distortion; Optical feedback; Optical receivers; Optical sensors; Optical waveguides; Photodetectors; Radio frequency;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712454
