Title :
A 3D Charge Model for FinFETs with Ballistic Transport
Author :
Zhang, Dawei ; Shao, Xue ; Yu, Zhiping ; Tian, Lilin
Author_Institution :
Institute of Microelectronics, Tsinghua University, Beijing 100084, China. Email: zdw99@mails.tsinghua.edu.cn
Abstract :
An analytical charge model is proposed for 3D FinFETs. The model is based on a self-consistent solution to 2D Poisson´s and Schrödinger equations with closed form. In conjunction with the ballistic transport along the channel, the device I-V characteristics is predicted. Through comparison with results from numerical and experimental data, the correctness of the model has been established.
Keywords :
Analytical models; Ballistic transport; Boundary conditions; FinFETs; Integrated circuit modeling; Laplace equations; Poisson equations; Schrodinger equation; Semiconductor device modeling; Silicon;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN :
4-9902762-0-5
DOI :
10.1109/SISPAD.2005.201506
