DocumentCode
2818141
Title
Integrated BRS/ridge transmit receive device fabrication using well established III-V material technology
Author
Plais, A. ; Chaumont, C. ; Mallecot, F. ; Gaborit, F. ; Carpentier, D. ; Jacquet, J. ; Leroy, A. ; Charil, J. ; Nakajima, H.
Author_Institution
Alcatel Alsthom Corp. Res. Centre, Marcoussis, France
fYear
1998
fDate
11-15 May 1998
Firstpage
273
Lastpage
275
Abstract
We present the fabrication of an in-line transmit receive device. By using an easy BRS/Ridge integration scheme, a record sensitivity value (-29.5 dBm) has been reached, in a 155 Mbit/s full duplex operation
Keywords
III-V semiconductors; distributed feedback lasers; indium compounds; integrated optoelectronics; optical communication equipment; optical filters; photodiodes; semiconductor lasers; transceivers; 155 Mbit/s; BRS/Ridge integration; DFB laser; InP; buried ridge structure; full duplex operation; in-line transmit receive device; optical filter; photodiode; sensitivity; Costs; Epitaxial growth; Laser transitions; Optical device fabrication; Optical filters; Optical materials; Photodiodes; Surface emitting lasers; Surface topography; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location
Tsukuba
ISSN
1092-8669
Print_ISBN
0-7803-4220-8
Type
conf
DOI
10.1109/ICIPRM.1998.712455
Filename
712455
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