• DocumentCode
    2818157
  • Title

    Simulation of Drain Current Reduction Caused by Process-Induced Stress

  • Author

    Uchida, T. ; Takashino, H. ; Tanizawa, M. ; Okagaki, T. ; Ishikawa, K. ; Eimori, T. ; Ohji, Y.

  • Author_Institution
    Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo, 664-0005, Japan
  • fYear
    2005
  • fDate
    01-03 Sept. 2005
  • Firstpage
    199
  • Lastpage
    202
  • Keywords
    Anisotropic magnetoresistance; Capacitive sensors; Circuit simulation; Crystallography; Isolation technology; Oxidation; Silicon; Temperature measurement; Tensile stress; Viscosity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
  • Print_ISBN
    4-9902762-0-5
  • Type

    conf

  • DOI
    10.1109/SISPAD.2005.201507
  • Filename
    1562059
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2818157