Low damage dry-etched grating on a MQW active layer and dislocation-free InP regrowth for 1.55 μm complex-coupled DFB lasers fabrication

Author

Talneau, A. ; Bouadma, N. ; Lebellego, Y. ; Slempkes, S. ; Ougazzaden, A. ; Patriarche, G. ; Sermage, B.

Author_Institution

France Telecom, CNET, Bagneux, France

fYear

1998

fDate

11-15 May 1998

Firstpage

288

Lastpage

291

Abstract

A grating dry-etched through the upper wells of an MQW active layer has been characterized before and after regrowth. TEM observation and carrier lifetime measurements have shown growth-free defects of the epitaxial layers. As a consequence, quasi 100% monomode oscillation on λ+1 mode has been achieved on complex-coupled DFB lasers fabricated with such a grating

Keywords

III-V semiconductors; carrier lifetime; distributed feedback lasers; gallium arsenide; gallium compounds; holographic gratings; indium compounds; quantum well lasers; semiconductor epitaxial layers; transmission electron microscopy; 1.55 mum; InGaAsP; InP; MQW active layer; TEM; carrier lifetime; complex-coupled DFB lasers; dislocation-free InP regrowth; dry-etched grating; epitaxial layers; quasi 100% monomode oscillation; Etching; Gratings; Indium phosphide; Laser modes; Laser tuning; Optical device fabrication; Quantum well devices; Quantum well lasers; Resists; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712459

Filename

712459