Title :
Generalized Comprehensive Approach for Robust Three-Dimensional Mesh Generation for TCAD
Author :
Heinzl, R. ; Grasser, T.
Author_Institution :
Christian Doppler Laboratory for TCAD in Microelectronics at the Institute for Microelectronics, TU Vienna, Gußhausstraße 27-29, A-1040 Vienna, Austria. Phone: +43-1-58801/36053, Fax: +43-1-58801/36099, E-mail: heinzl@iue.tuwien.ac.at
Abstract :
To overcome the difficulties in three-dimensional mesh generation for TCAD the advancing front Delaunay mesh generation method [1] was generalized by means of a set of meshing rules. A solid modeling language based on the needs of modern TCAD applications, and a mesh optimization based on a fuzzy classification scheme for the degree of degeneracy of elements have been developed and are ready for use. The applicability and results obtained from our generalized comprehensive approach are presented.
Keywords :
Electronic mail; Ion implantation; Laboratories; Mesh generation; Microelectronics; Power generation; Robustness; Solid modeling; Surface topography; Testing;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN :
4-9902762-0-5
DOI :
10.1109/SISPAD.2005.201510
