Title :
High reliability of 1.55 μm current-blocking grating complex-coupled DFB lasers
Author :
Shiao, Hung-Pin ; Wang, Chi-Yu ; Lin, Wei ; Shih, Tien-Tsorng
Author_Institution :
Telecommun. Lab., Chunghwa Telecom Co. Ltd., South Korea
Abstract :
We report the high performance and high reliability of the 1.55 μm current-blocking grating complex-coupled distributed-feedback lasers. Small variations in slope efficiency, high characteristic temperature, and high side mode suppression ratio have been achieved over a wide temperature range of 20~90°C. From the accelerated aging test, the median life for the lasers operating at 25°C and 5 mW is estimated to be longer than 50 years
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser modes; laser reliability; quantum well lasers; 1.55 mum; 20 to 90 degC; 25 degC; 5 mW; InGaAsP; accelerated aging test; characteristic temperature; current-blocking grating complex-coupled DFB lasers; distributed-feedback lasers; median life; performance; reliability; side mode suppression ratio; slope efficiency; Distributed feedback devices; Erbium-doped fiber lasers; Gratings; Indium phosphide; Laser feedback; Laser modes; Optical coupling; Quantum well lasers; Temperature distribution; Wet etching;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712460
