High reliability of 1.55 μm current-blocking grating complex-coupled DFB lasers

Author

Shiao, Hung-Pin ; Wang, Chi-Yu ; Lin, Wei ; Shih, Tien-Tsorng

Author_Institution

Telecommun. Lab., Chunghwa Telecom Co. Ltd., South Korea

fYear

1998

fDate

11-15 May 1998

Firstpage

292

Lastpage

294

Abstract

We report the high performance and high reliability of the 1.55 μm current-blocking grating complex-coupled distributed-feedback lasers. Small variations in slope efficiency, high characteristic temperature, and high side mode suppression ratio have been achieved over a wide temperature range of 20~90°C. From the accelerated aging test, the median life for the lasers operating at 25°C and 5 mW is estimated to be longer than 50 years

Keywords

III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser modes; laser reliability; quantum well lasers; 1.55 mum; 20 to 90 degC; 25 degC; 5 mW; InGaAsP; accelerated aging test; characteristic temperature; current-blocking grating complex-coupled DFB lasers; distributed-feedback lasers; median life; performance; reliability; side mode suppression ratio; slope efficiency; Distributed feedback devices; Erbium-doped fiber lasers; Gratings; Indium phosphide; Laser feedback; Laser modes; Optical coupling; Quantum well lasers; Temperature distribution; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712460

Filename

712460