DocumentCode
2818240
Title
Numerical and Analytical Modeling of the High-Field Electron Mobility in Strained Silicon
Author
Dhar, S. ; Karlowatz, G. ; Ungersboeck, E. ; Kosina, H.
Author_Institution
Institute for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040 Wien, Austria. Phone: +43-1-58801/36018, Fax: +43-1- 58801/36099. E-mail: dhar@iue.tuwien.ac.at
fYear
2005
fDate
01-03 Sept. 2005
Firstpage
223
Lastpage
226
Abstract
We have performed a detailed analysis of the electron transport at high electric field in strained Si for different field directions and stress/strain conditions using Full-band Monte Carlo simulations. A phenomeno-logical model describing the velocity-field relationship for electrons in biaxially or uniaxially strained Si has been developed. The model is suitable for incorporation into any device simulator for performing TCAD tasks.
Keywords
Analytical models; CMOS technology; Capacitive sensors; Electron mobility; Germanium silicon alloys; Monte Carlo methods; Numerical models; Silicon germanium; Substrates; Tensile stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN
4-9902762-0-5
Type
conf
DOI
10.1109/SISPAD.2005.201513
Filename
1562065
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