• DocumentCode
    2818287
  • Title

    An all-epitaxial InP-based 1.55 μm VCSEL process with defect-free AlxOy/GaAs distributed Bragg reflector mirrors

  • Author

    Gebretsadik, H. ; Kamath, K. ; Bhattacharya, P. ; Caneau, C. ; Bhat, R.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
  • fYear
    1998
  • fDate
    11-15 May 1998
  • Firstpage
    307
  • Lastpage
    309
  • Abstract
    A 1.55 μm InP-based vertical cavity surface emitting laser process, which uses growth of defect-free Al(Ga)As/GaAs distributed Bragg reflector mirrors on patterned InP-based heterostructures was designed. This new mirror technology enabled the formation of a short-stack AlxOy/GaAs DBR mirror. In addition, the formation of a dielectric aperture by the partial oxidation of lattice-matched InAlAs was characterized and incorporated into the process
  • Keywords
    III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; laser mirrors; oxidation; quantum well lasers; semiconductor growth; surface emitting lasers; vapour phase epitaxial growth; 1.55 mum; AlGaAs-GaAs; InGaAsP-InP; MOVPE; MQW active region; VCSEL; dielectric aperture; distributed Bragg reflector mirrors; partial oxidation; patterned InP-based heterostructures; short-stack mirror; Apertures; Dielectrics; Distributed Bragg reflectors; Gallium arsenide; Indium compounds; Mirrors; Optical design; Oxidation; Surface emitting lasers; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1998 International Conference on
  • Conference_Location
    Tsukuba
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-4220-8
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1998.712464
  • Filename
    712464
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2818287