DocumentCode
2818300
Title
Simulation Analysis of Series Resistance for SOI MOSFET in Nanometer Regime
Author
Wang, Xinlin ; Oldiges, Phil ; Bryant, Andres ; Cai, Jin ; Ouyang, Qiqing ; Rim, Ken
Author_Institution
IBM Semiconductor Research and Development Center, Microelectronics Division, Hopewell Junction, NY 12533. Email: xinlinw@us.ibm.com Phone:
fYear
2005
fDate
01-03 Sept. 2005
Firstpage
239
Lastpage
242
Abstract
In this work, we simulated silicon-on-insulator (SOI) transistors with a design targeting for 45nm NFET. A detailed simulation and analysis of the series resistance (Rs) is performed to study the impact of the halo or extension dose, position and grading on Rs. It is shown that Rs depends on junction grading. Changing halo position appears to improve SCE without degrading Rs, while higher halo dose does degrade Rs due to halo compensating the extension doping.
Keywords
Analytical models; Degradation; Doping profiles; Germanium silicon alloys; MOSFET circuits; Microelectronics; Performance analysis; Research and development; Silicon germanium; Silicon on insulator technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN
4-9902762-0-5
Type
conf
DOI
10.1109/SISPAD.2005.201517
Filename
1562069
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