Title :
Simulation Analysis of Series Resistance for SOI MOSFET in Nanometer Regime
Author :
Wang, Xinlin ; Oldiges, Phil ; Bryant, Andres ; Cai, Jin ; Ouyang, Qiqing ; Rim, Ken
Author_Institution :
IBM Semiconductor Research and Development Center, Microelectronics Division, Hopewell Junction, NY 12533. Email: xinlinw@us.ibm.com Phone:
Abstract :
In this work, we simulated silicon-on-insulator (SOI) transistors with a design targeting for 45nm NFET. A detailed simulation and analysis of the series resistance (Rs) is performed to study the impact of the halo or extension dose, position and grading on Rs. It is shown that Rs depends on junction grading. Changing halo position appears to improve SCE without degrading Rs, while higher halo dose does degrade Rs due to halo compensating the extension doping.
Keywords :
Analytical models; Degradation; Doping profiles; Germanium silicon alloys; MOSFET circuits; Microelectronics; Performance analysis; Research and development; Silicon germanium; Silicon on insulator technology;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN :
4-9902762-0-5
DOI :
10.1109/SISPAD.2005.201517
