A Novel Single-Gated Strained CMOS Architecture: COSMOS

We present a simulation study of a novel CMOS device architecture capable of building complementary logic operation using only a single gate stack. The new architecture, named complementary orthogonal stacked MOS (COSMOS), places the n and p-MOSFETs perpendicular to one another under a single gate. As a result of concurrent vertical and lateral integration, the COSMOS architecture can lead to dramatic savings in active device area of a conventional static CMOS pair, as weil as significant reductions in RC device parasitics. We demonstrate how the COSMOS devices may be built, operated and optmized for symmetric operation, also verifing logic NOT operation via 3D device simulations. COSMOS architecture appears to have peculiar scaling trends such as increasing threshold at reduced gate dimensions. The increase in drive voltages lead to faster operation at the expense of higher static leakage and loss of noise margins.