Title :
Optimization of a high bit rate GaAs MESFET amplifier for optical reception
Author :
Saad, Ricardo E. ; Souza, Rui F.
Abstract :
A performance optimization of a transimpedance preamplifier used for 1.3-μm digital optical reception is presented. The influence of the bias resistor on the high-frequency behavior of two GaAs MESFET circuits is analyzed. The two circuit configurations are analyzed with regard to sensitivity and dynamic range, using the Y parameters. It is shown that, although the number of components and the sensitivity of the two configurations are the same, the dynamic range is noticeably different
Keywords :
III-V semiconductors; Schottky gate field effect transistors; amplifiers; gallium arsenide; optical communication equipment; preamplifiers; receivers; 1.3 micron; GaAs; III-V semiconductors; MESFET amplifier; MESFET circuits; Y parameters; bias resistor; digital optical reception; dynamic range; high-frequency behavior; optical reception; performance optimization; sensitivity; transimpedance preamplifier; Bit rate; Circuit analysis; Dynamic range; Gallium arsenide; MESFETs; Optical amplifiers; Optical sensors; Optimization; Semiconductor optical amplifiers; Stimulated emission;
Conference_Titel :
Telecommunications Symposium, 1990. ITS '90 Symposium Record., SBT/IEEE International
Conference_Location :
Rio de Janeiro
DOI :
10.1109/ITS.1990.175647
