DocumentCode
2818437
Title
Comprehensive numerical model for Phase-Change Memory simulations
Author
Redaelli, A. ; Lacaita, A.L. ; Benvenuti, A. ; Pirovano, A.
Author_Institution
DEI, Politecnico di Milano, Milano, Italy
fYear
2005
fDate
01-03 Sept. 2005
Firstpage
279
Lastpage
282
Abstract
A "multi-physics" numerical model that couples a detailed electrical description with the heat equation and with a microscopic picture of the phase transition dynamics is presented. This model, implemented in a three dimensional semiconductor device solver, correctly reproduces the electronic switching effect in the amorphous chalcogenide alloy and the phase-transitions dynamics, providing steady-state and transient simulation results in good agreement with experimental data.
Keywords
Active matrix technology; Amorphous materials; Crystallization; Nonvolatile memory; Numerical models; Phase change materials; Phase change memory; Resistance heating; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN
4-9902762-0-5
Type
conf
DOI
10.1109/SISPAD.2005.201527
Filename
1562079
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