Title :
Comprehensive numerical model for Phase-Change Memory simulations
Author :
Redaelli, A. ; Lacaita, A.L. ; Benvenuti, A. ; Pirovano, A.
Author_Institution :
DEI, Politecnico di Milano, Milano, Italy
Abstract :
A "multi-physics" numerical model that couples a detailed electrical description with the heat equation and with a microscopic picture of the phase transition dynamics is presented. This model, implemented in a three dimensional semiconductor device solver, correctly reproduces the electronic switching effect in the amorphous chalcogenide alloy and the phase-transitions dynamics, providing steady-state and transient simulation results in good agreement with experimental data.
Keywords :
Active matrix technology; Amorphous materials; Crystallization; Nonvolatile memory; Numerical models; Phase change materials; Phase change memory; Resistance heating; Temperature; Voltage;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN :
4-9902762-0-5
DOI :
10.1109/SISPAD.2005.201527
