Joule Heating under Quasi-Ballistic Transport Conditions in Bulk and Strained Silicon Devices

We use Monte Carlo simulations to examine self-heating in ultra-short silicon devices when quasiballistic transport conditions dominate. The generated phonon spectrum in strained silicon is found to be different from bulk silicon at low electric fields, but essentially the same under high fields. Joule heat dissipation in ultra-short devices occurs almost entirely in their drain region, since transport across the channel is quasiballistic. The results of this work can be used to gauge the electro-thermal performance of ultra-scaled device geometries.