Title :
Performance Enhancement of pMOSFETs Depending on Strain, Channel Direction, and Material
Author :
Uchida, Masaya ; Kamakura, Yoshinari ; Taniguchi, Kazuhiro ; Taniguchi, Kenji
Author_Institution :
Division of Electrical, Electronic and Information Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan, E-mail: uchida@qd.eie.eng.osaka-u.ac.jp
Abstract :
In the framework of k.p band calculation, we investigate the modulation of the low-field mobility and the injection velocity of holes in Si- and Ge-channel pMOSFETs under the uniaxial and the biaxial strain. The contribution of the relaxation time and the conductivity effective mass modulation on the mobility enhancement is separately analyzed. Both the mobility and the injection velocity are enhanced most effectively by the uniaxial compressive strain along the
Keywords :
Capacitive sensors; Compressive stress; Conductivity; Germanium silicon alloys; Lattices; MOSFETs; Silicon germanium; Tensile strain; Tensile stress; Uniaxial strain;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN :
4-9902762-0-5
DOI :
10.1109/SISPAD.2005.201536
