DocumentCode
2818579
Title
Performance Enhancement of pMOSFETs Depending on Strain, Channel Direction, and Material
Author
Uchida, Masaya ; Kamakura, Yoshinari ; Taniguchi, Kazuhiro ; Taniguchi, Kenji
Author_Institution
Division of Electrical, Electronic and Information Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan, E-mail: uchida@qd.eie.eng.osaka-u.ac.jp
fYear
2005
fDate
01-03 Sept. 2005
Firstpage
315
Lastpage
318
Abstract
In the framework of k.p band calculation, we investigate the modulation of the low-field mobility and the injection velocity of holes in Si- and Ge-channel pMOSFETs under the uniaxial and the biaxial strain. The contribution of the relaxation time and the conductivity effective mass modulation on the mobility enhancement is separately analyzed. Both the mobility and the injection velocity are enhanced most effectively by the uniaxial compressive strain along the
Keywords
Capacitive sensors; Compressive stress; Conductivity; Germanium silicon alloys; Lattices; MOSFETs; Silicon germanium; Tensile strain; Tensile stress; Uniaxial strain;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN
4-9902762-0-5
Type
conf
DOI
10.1109/SISPAD.2005.201536
Filename
1562088
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