DocumentCode
2818590
Title
Calibrated Mobility Corrections for Drift Diffusion Simulation of Strained MOSFET Devices.
Author
Villanueva, D. ; Dray, A. ; Orain, S. ; Fiori, V. ; Ortolland, C. ; Fuchs, E. ; Salvetti, Federica ; Juge, A.
Author_Institution
Philips Semiconductors, 860 rue Jean Monnet 38920 Crolles, France, +33 (0) 4 38 92 26 49, davy.villanueva@philipscrolles.st.com
fYear
2005
fDate
01-03 Sept. 2005
Firstpage
319
Lastpage
322
Abstract
In this paper, simple corrections to traditional Drift-Diffusion mobility models are derived from strained full-band Monte Carlo simulations in order to correctly account for strain effects. The validity of this approach is benchmarked upon Monte Carlo MOSFET simulations as well as experimental data featuring tensile nitride capping layers.
Keywords
Capacitive sensors; Compressive stress; Doping; MOSFET circuits; Monte Carlo methods; Region 1; Scattering; Semiconductor films; Silicon; Tensile stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN
4-9902762-0-5
Type
conf
DOI
10.1109/SISPAD.2005.201537
Filename
1562089
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