Title :
Exploring Transistor Width Effect on Stress-induced Performance Improvement in PMOSFET with SiGe Source/Drain
Author :
Wang, Xin ; Huang, M. ; Bowen, C. ; Adam, L. ; Singh, C. ; Chiu, C. ; Wu, J.
Author_Institution :
Texas Instruments Incorporated, Silicon Technology Development, Dallas, TX 75243
Abstract :
Stress distribution in the Si channel regions of SiGe source/drain PMOSFETs with various widths is studied by 3D simulations. The width dependence of performance improvement is analyzed via device simulations.
Keywords :
Analytical models; Compressive stress; Effective mass; Germanium silicon alloys; Instruments; Lattices; MOSFET circuits; Performance analysis; Piezoresistance; Silicon germanium;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN :
4-9902762-0-5
DOI :
10.1109/SISPAD.2005.201538
