DocumentCode
2818611
Title
Exploring Transistor Width Effect on Stress-induced Performance Improvement in PMOSFET with SiGe Source/Drain
Author
Wang, Xin ; Huang, M. ; Bowen, C. ; Adam, L. ; Singh, C. ; Chiu, C. ; Wu, J.
Author_Institution
Texas Instruments Incorporated, Silicon Technology Development, Dallas, TX 75243
fYear
2005
fDate
01-03 Sept. 2005
Firstpage
323
Lastpage
326
Abstract
Stress distribution in the Si channel regions of SiGe source/drain PMOSFETs with various widths is studied by 3D simulations. The width dependence of performance improvement is analyzed via device simulations.
Keywords
Analytical models; Compressive stress; Effective mass; Germanium silicon alloys; Instruments; Lattices; MOSFET circuits; Performance analysis; Piezoresistance; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN
4-9902762-0-5
Type
conf
DOI
10.1109/SISPAD.2005.201538
Filename
1562090
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