DocumentCode
2819008
Title
Improved selective area growth properties in metalorganic vapor phase epitaxy by adding HCl
Author
Tsuchiya, T.
Author_Institution
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fYear
1998
fDate
11-15 May 1998
Firstpage
325
Lastpage
328
Abstract
Selective area growth (SAG) of InP on a planar substrate by metalorganic vapor phase epitaxy (MOVPE) is an attractive way to integrate optical devices. To improve the growth mode of SAG, the author has added hydrogen chloride (HCl) to conventional MOVPE, and discusses the flatness, thickness enhancement ratio, and crystalline quality of Cl-assisted SAG
Keywords
III-V semiconductors; MOCVD; indium compounds; integrated optics; semiconductor epitaxial layers; semiconductor growth; surface topography; vapour phase epitaxial growth; Cl-assisted SAG; HCl; InP; MOVPE; crystalline quality; flatness; growth mode; hydrogen chloride; integrated optical devices; metalorganic vapor phase epitaxy; planar substrate; selective area growth; thickness enhancement ratio; Epitaxial growth; Epitaxial layers; Gases; Human computer interaction; Hydrogen; Indium phosphide; Inductors; Scanning electron microscopy; Substrates; Surface morphology;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location
Tsukuba
ISSN
1092-8669
Print_ISBN
0-7803-4220-8
Type
conf
DOI
10.1109/ICIPRM.1998.712468
Filename
712468
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