Title :
Single Event Transient and ELDRS Characterization Test Results for LM4050QML 2.5V Precision Reference
Author :
Kruckmeyer, Kirby ; Morozumi, Elisa ; Eddy, Robert ; Trinh, Thang ; Santiago, Tom ; Maillard, Pierre
Author_Institution :
Nat. Semicond., Santa Clara, CA, USA
Abstract :
National Semiconductor´s 100 krad(Si) low dose rate qualified, 2.5V precision reference, LM4050WG2.5RLQV, was put through heavy ion testing and an enhanced low dose rate sensitivity (ELDRS) characterization. The results are presented here.
Keywords :
integrated circuit testing; ion beam effects; radiation hardening (electronics); reference circuits; silicon; ELDRS characterization test results; LM4050QML precision reference; Si; enhanced low dose rate sensitivity characterization; heavy ion testing; low dose rate qualified; single event transient; voltage 2.5 V; Capacitors; Ion beams; Leg; Radiation effects; Resistors; Testing; Transient analysis;
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2010 IEEE
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-8405-8
DOI :
10.1109/REDW.2010.5619582
