Investigation of Low-Frequency Noise in p-type Nanowire FETs: Effect of Switched Biasing Condition and Embedded SiGe Layer

Author

Sang-Hyun Lee ; Ye-Ram Kim ; Jae-Ho Hong ; Eui-Young Jeong ; Jun-Sik Yoon ; Chang-Ki Baek ; Dong-Won Kim ; Jeong-Soo Lee ; Yoon-Ha Jeong

Author_Institution

Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea

Volume

35

Issue

7

fYear

2014

fDate

Jul-14

Firstpage

702

Lastpage

704

Abstract

The low-frequency noise (LFN) of a p-type nanowire FET (p-NWFET) was characterized and compared with that of an n-type NWFET (n-NWFET) in terms of dominant noise source and its location in the channel region. An inverse proportional dependence of the noise level on channel diameter was observed in the p-NWFET but not in the n-NWFET. The LFN was observed to be mainly generated by Hooge mobility fluctuation in the p-NWFET. Under a switched biasing condition, p-NWFET showed no substantial LFN reduction (in contrast to the n-NWFET), indicating that the carrier number fluctuation was insignificant. This was due to the compressive stress induced by embedded SiGe with heavier transverse effective hole mobility.

Keywords

Ge-Si alloys; carrier density; field effect transistors; hole mobility; nanowires; Hooge mobility fluctuation; LFN; SiGe; carrier number fluctuation; channel diameter; channel region location; compressive stress; dominant noise source; embedded SiGe; inverse proportional dependence; low-frequency noise; n-NWFET; n-type NWFET; noise level; p-NWFET; p-type nanowire FET; switched biasing condition; transverse effective hole mobility; Logic gates; Low-frequency noise; Scattering; Silicon; Silicon germanium; Switches; Nanowire FET; low frequency noise; switched biasing 1/f noise; switched biasing 1/f noise.;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2323255

Filename

6823696