Title :
First multi-mode interference devices fabricated by metal-organic vapor phase diffusion enhanced selective area epitaxy
Author :
Bouda, M. ; Kaida, N. ; Mishima, Y. ; Nakano, Y. ; Shimogaki, Y. ; Tada, K.
Author_Institution :
Sch. of Eng., Tokyo Univ., Japan
Abstract :
For the first time multi-mode interference (MMI) power splitters have been fabricated by selective area growth, using our novel metal-organic vapor phase diffusion enhanced selective area epitaxy (MOVE2) process which features extremely wide-range in-plane bandgap control and high design flexibility and therefore is very suitable for photonic integration. Excess losses as low as 2 dB have been obtained for MMI power splitters with smooth and sufficiently flat waveguide structures including S-bends
Keywords :
III-V semiconductors; MOCVD; indium compounds; light interference; optical beam splitters; optical losses; optical planar waveguides; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 2 dB; InP; MMI power splitters; MOVE2; S-bends; excess losses; high design flexibility; metal-organic vapor phase diffusion enhanced selective area epitaxy; multi-mode interference devices; photonic integration; power splitters; smooth flat waveguide structures; wide-range in-plane bandgap control; Absorption; Dielectric substrates; Epitaxial growth; Fabrication; Indium gallium arsenide; Indium phosphide; Interference; Optical losses; Photonic band gap; Photonic integrated circuits;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712469