Title :
Fabrication of sub-micron CMOS-SOS devices using direct-write electron beam lithography
Author :
Brown, A.G. ; Mortimer, S.H. ; Till, S.J. ; Willis, H. ; Boller, F.D.J. ; Hodge, A.M.
Author_Institution :
R. Signals & Radar Establ., Malvern, UK
Abstract :
In any advanced CMOS process, certain lithographic stages will require the highest resolution, namely the definition of the gates and gate interconnect contact holes and second interconnect layer. Therefore, electron beam lithography has been used at RSRE to produce CMOS-SOS devices with sub-micron gate dimensions. The performance of such devices will be used in future work to identify the processing requirements that will be needed for fully scaled sub-micron SOS transistors
Keywords :
CMOS integrated circuits; electron beam lithography; integrated circuit technology; RSRE; contact holes; direct-write electron beam lithography; fully scaled sub-micron SOS transistors; gate interconnect; gates; processing requirements; resolution; second interconnect layer; sub-micron CMOS-SOS devices;
Conference_Titel :
Sub-Micron Silicon Engineering, IEE Colloquium on
Conference_Location :
London
