Title :
The electronic structure of oxygen in silicon as revealed by volume visualization of Ab initio calculations
Author :
Wolfe, Robert H. ; Needels, Mark ; Joannopoulos, John D.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Volumetric rendering is applied to the interpretation of atomic-scale data generated from quantum molecular dynamics computations. In particular, for silicon computations it is found that volumetric visualization of the computed 3D electronic charge density is a valuable tool for identifying defect states in silicon lattices in which oxygen atoms occur as impurities. Rendering of several judiciously selected ranges of charge density in translucent colors provides an effective means of identifying broken or altered molecular bonds and induced charge excesses in the lattice. The resulting 3D images reveal important features missed previously in 2D charge density contour maps. Stereoscopic `blink comparison´ of image pairs is an extremely valuable way to study the structural differences among various configurations, and animation provides significant insight into the molecular dynamics
Keywords :
ab initio calculations; bonds (chemical); computer graphics; elemental semiconductors; impurity electron states; molecular dynamics method; oxygen; physics computing; silicon; 3D electronic charge density; Ab initio calculations; Si:O; animation; atomic-scale data; defect states; electronic structure; image pairs; induced charge excesses; molecular bonds; quantum molecular dynamics computations; stereoscopic blink comparison; structural differences; translucent colors; volume visualization; volumetric rendering; Clouds; Data visualization; Lattices; Optical surface waves; Oxygen; Physics computing; Quantum computing; Quantum mechanics; Silicon; Surface morphology;
Conference_Titel :
Visualization, 1991. Visualization '91, Proceedings., IEEE Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
0-8186-2245-8
DOI :
10.1109/VISUAL.1991.175786