Title :
Noise in submicron MOSFETs-a tool for characterising the Si-SiO2 interface
Author :
Uren, M.J. ; Kirton, M.J. ; Collins, S.
Author_Institution :
R. Signals & Radar Estab., Great Malvern, UK
Abstract :
In submicron MOSFETs, a discrete switching in the drain current can be seen as electrons are captured and emitted from a single Si-SiO 2 interface state. In larger devices where a large number of defects are active, this results in 1/f noise in the device resistance. This paper is concerned with why the properties of those defects result in a spectrum of 1/f form and the relationship between noise measurements of interface states and the more conventional technique of CV testing
Keywords :
electron device noise; elemental semiconductors; insulated gate field effect transistors; semiconductor-insulator boundaries; silicon; silicon compounds; 1/f noise; CV testing; Si-SiO2 interface state; device resistance; discrete switching; drain current; noise measurements; submicron MOSFETs;
Conference_Titel :
Sub-Micron Silicon Engineering, IEE Colloquium on
Conference_Location :
London
