Title :
Failure mode of different irradiated power IGBT structures
Author :
Lorfevre, E. ; Dachs, Charles ; Detcheverry, Céline ; Sudre, Christophe ; Roubaud, Frank ; Palau, Jean-Marie ; Gasiot, Jean ; Calvet, Marie-Catherine ; EcoffetS, Robert
Author_Institution :
Centre d´´Electron., Univ. des Sci. et Tech. du Languedoc, Montpellier, France
Abstract :
A 2D-simulation investigation determines the heavy ion failure mode of three different IGBT structures. The sensitivities of a N-channel IGBT, with and without n+ buffer and of a P-channel IGBT are compared in simulation
Keywords :
failure analysis; insulated gate bipolar transistors; ion beam effects; 2D simulation; N-channel IGBT; P-channel IGBT; failure mode; heavy ion irradiation; n+ buffer; power IGBT; Doping profiles; Electric variables; Insulated gate bipolar transistors; Ionization; MOSFETs; Medical simulation; Scattering; Semiconductor process modeling; Temperature sensors; Thyristors;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
Conference_Location :
Cannes
Print_ISBN :
0-7803-4071-X
DOI :
10.1109/RADECS.1997.698988
