DocumentCode
2819366
Title
Progress in GaInNAs semiconductor lasers
Author
Kondow, M. ; Larson, C. ; Kitatani, T. ; Nakahara, K. ; Uomi, K.
Author_Institution
RWCP Opt. Interconnection, Hitachi Lab., Tokyo, Japan
fYear
1998
fDate
11-15 May 1998
Firstpage
333
Lastpage
336
Abstract
This paper reviews our recent progress in GaInNAs/GaAs long-wavelength lasers. GaInNAs has been applied in both edge-emitting and vertical-cavity surface-emitting lasers. We have experimentally demonstrated that the GaInNAs laser diodes are very promising to overcome the poor temperature behavior of the conventional InGaAsP-based long-wavelength lasers
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; reviews; surface emitting lasers; GaInNAs semiconductor lasers; GaInNAs-GaAs; GaInNAs/GaAs long-wavelength lasers; edge-emitting lasers; laser diodes; review; temperature behavior; vertical-cavity surface-emitting lasers; Diode lasers; Gallium arsenide; Laboratories; Optical surface waves; Semiconductor lasers; Substrates; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location
Tsukuba
ISSN
1092-8669
Print_ISBN
0-7803-4220-8
Type
conf
DOI
10.1109/ICIPRM.1998.712470
Filename
712470
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