Title :
A 2.4 Vpp, 60-Gb/s, mm-Wave DAC-Based CMOS Driver with Adjustable Amplitude and Peaking Frequency
Author :
Aroca, Ricardo A. ; Schvan, Peter ; Voinigescu, Sorin P.
Author_Institution :
Edward S. Rogers Sr. Dept. of ECE, Univ. of Toronto, Toronto, ON, Canada
Abstract :
A 60-Gb/s CMOS driver employing mm-wave DACs to achieve broadband waveshape control and pre-emphasis at different peaking frequencies is presented. It features a modified distributed amplifier (DA) architecture that achieves low-voltage and high-speed summation of both low-pass and reactively-coupled bandpass signal paths along an output transmission line. Using binary-weighted MOSFET gate fingers in Gilbert-cell based DACs, the circuit can supply variable output swing up to 1.2V peak-to-peak per side in a 50Ω load and independent digital pre-emphasis control at 25 GHz, 35 GHz and 45 GHz, respectively. S-parameter measurements of the entire retimed transmitter show 60dB of differential gain, while the standalone DA exhibits approximately 10 dB of peaking control in each of the three frequency bands. Input and output return loss is better than - 10 dB up to 60 GHz. The entire circuit, including the transimpedance-limiting-amplifier-retimer, operates from 1.2V and 2V supplies and achieves a throughput efficiency of 12.2 mW/Gb/s.
Keywords :
CMOS integrated circuits; MOSFET; S-parameters; band-pass filters; differentiating circuits; digital-analogue conversion; distributed amplifiers; driver circuits; low-pass filters; microwave integrated circuits; operational amplifiers; transmission lines; Gilbert-cell based DAC; S-parameter measurements; amplitude frequency; binary-weighted MOSFET gate fingers; bit rate 60 Gbit/s; broadband waveshape control; differential gain; distributed amplifier architecture; frequency 25 GHz; frequency 35 GHz; frequency 45 GHz; gain 10 dB; gain 60 dB; independent digital pre-emphasis control; low-pass signal path; mm-Wave DAC-based CMOS driver; output swing; output transmission line; peaking frequency; reactively-coupled bandpass signal path; resistance 50 ohm; retimed transmitter; throughput efficiency; transimpedance-limiting-amplifier-retimer; voltage 1.2 V to 2 V; Broadband amplifiers; CMOS integrated circuits; Driver circuits; Frequency control; Gain; MOSFET circuits;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010 IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-7437-0
Electronic_ISBN :
1550-8781
DOI :
10.1109/CSICS.2010.5619605