DocumentCode
2819617
Title
ThruChip interface for 3D system integration
Author
Kuroda, Tadahiro
Author_Institution
Keio Univ., Yokohama, Japan
fYear
2010
fDate
26-29 April 2010
Firstpage
19
Lastpage
19
Abstract
ThruChip Interface (TCI) employing inductive coupling bares comparison with Through Silicon Via (TSV) in terms of data rate (11Gb/s/ch), reliability (BER≪10-14), and energy dissipation (0.14pJ/b). It is less expensive than TSV by 20c/chip, though, since it is implemented by digital circuits in a standard CMOS. ESD protection devices can be eliminated to further lower delay, power, and area. It exhibits high noise immunity and alignment tolerance. It provides with an AC coupling link to make interface design easy under multiple/variable VDD´s. The cost/performance will further be improved exponentially by thinning chip thickness. Applications include Solid-State Drive (SSD) by stacking NAND Flash memories, a high-speed low-power DRAM interface, bus probing through package for debugging, and non-contact wafer testing. Wireless power delivery by using inductive coupling will further widen the applications. This talk will cover basics, applications, and future perspectives of the TCI.
Keywords
CMOS integrated circuits; NAND circuits; flash memories; three-dimensional integrated circuits; 3D system integration; BER; CMOS; DRAM interface; ESD protection devices; NAND flash memories; energy dissipation; inductive coupling; multiple-variable VDD; noncontact wafer testing; solid-state drive; through silicon via; thruchip interface; CMOS digital integrated circuits; Coupling circuits; Digital circuits; Electrostatic discharge; Energy dissipation; Integrated circuit reliability; Power system reliability; Protection; Silicon; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Design Automation and Test (VLSI-DAT), 2010 International Symposium on
Conference_Location
Hsin Chu
Print_ISBN
978-1-4244-5269-9
Electronic_ISBN
978-1-4244-5271-2
Type
conf
DOI
10.1109/VDAT.2010.5496681
Filename
5496681
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