Title :
Subharmonically Pumped 210 GHz I/Q Mixers
Author :
Lopez-Diaz, D. ; Kallfass, I. ; Tessmann, A. ; Leuther, A. ; Massler, H. ; Schlechtweg, M. ; Ambacher, O.
Author_Institution :
High Freq. Devices & Circuits, Fraunhofer Inst. for Appl. Solid State Phys. IAF, Freiburg, Germany
Abstract :
Two subharmonically pumped 210 GHz I/Q mixer MMICs have been successfully realized in a 100 nm gate length metamorphic high electron mobility transistor (mHEMT) technology. The mixers have been designed using a branchline and a Lange coupler to generate the 90° phase shift between the I and Q ports. A conversion gain of more than 19 dB has been achieved with both mixers. The measured LO to RF isolation of the second harmonic is better than 21 dB.
Keywords :
MMIC; high electron mobility transistors; mixers (circuits); I/Q mixer; Lange coupler; MMIC; conversion gain; frequency 210 GHz; mHEMT technology; metamorphic high electron mobility transistor; size 100 nm; subharmonic mixer; Couplers; Frequency measurement; Gain; Mixers; Radio frequency; Transmission line measurements;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010 IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-7437-0
Electronic_ISBN :
1550-8781
DOI :
10.1109/CSICS.2010.5619614
