• DocumentCode
    2819692
  • Title

    Subharmonically Pumped 210 GHz I/Q Mixers

  • Author

    Lopez-Diaz, D. ; Kallfass, I. ; Tessmann, A. ; Leuther, A. ; Massler, H. ; Schlechtweg, M. ; Ambacher, O.

  • Author_Institution
    High Freq. Devices & Circuits, Fraunhofer Inst. for Appl. Solid State Phys. IAF, Freiburg, Germany
  • fYear
    2010
  • fDate
    3-6 Oct. 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Two subharmonically pumped 210 GHz I/Q mixer MMICs have been successfully realized in a 100 nm gate length metamorphic high electron mobility transistor (mHEMT) technology. The mixers have been designed using a branchline and a Lange coupler to generate the 90° phase shift between the I and Q ports. A conversion gain of more than 19 dB has been achieved with both mixers. The measured LO to RF isolation of the second harmonic is better than 21 dB.
  • Keywords
    MMIC; high electron mobility transistors; mixers (circuits); I/Q mixer; Lange coupler; MMIC; conversion gain; frequency 210 GHz; mHEMT technology; metamorphic high electron mobility transistor; size 100 nm; subharmonic mixer; Couplers; Frequency measurement; Gain; Mixers; Radio frequency; Transmission line measurements;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010 IEEE
  • Conference_Location
    Monterey, CA
  • ISSN
    1550-8781
  • Print_ISBN
    978-1-4244-7437-0
  • Electronic_ISBN
    1550-8781
  • Type

    conf

  • DOI
    10.1109/CSICS.2010.5619614
  • Filename
    5619614
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2819692