Scaling of InP HEMT Cascode Integrated Circuits to THz Frequencies

Author

Deal, W.R. ; Leong, K. ; Mei, X.B. ; Sarkozy, S. ; Radisic, V. ; Lee, J. ; Liu, P.H. ; Yoshida, W. ; Zhou, J. ; Lange, M.

Author_Institution

Northrop Grumman Corp., Redondo Beach, CA, USA

fYear

2010

fDate

3-6 Oct. 2010

Firstpage

1

Lastpage

4

Abstract

In this paper, we demonstrate that the cascode amplifier topology can be extended to operating frequencies >500 GHz. Two packaged cascode amplifiers are reported, including a broadband 3 stage amplifier with ~17 dB gain and 8.3 dB packaged noise figure at 300 GHz and a narrowband amplifier with 10 dB gain at 0.55 THz measured in package. Both of these amplifiers use 30 nm InP HEMT transistors, are realized in coplanar waveguide on a 1-Mil thick InP substrate and use a monolithically integrated electromagnetic transition for coupling energy from the chip to the waveguide package.

Keywords

HEMT integrated circuits; III-V semiconductors; amplifiers; coplanar waveguides; indium compounds; microwave integrated circuits; 1-Mil thick InP substrate; InP; InP HEMT cascode integrated circuits; InP HEMT transistors; THz frequencies; broadband 3 stage amplifier; cascode amplifier topology; coplanar waveguide; coupling energy; frequency 300 GHz; gain 10 dB; monolithically integrated electromagnetic transition; narrowband amplifier; noise figure; noise figure 8.3 dB; size 30 nm; Electromagnetic waveguides; Frequency measurement; Gain; HEMTs; Indium phosphide; Integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010 IEEE

Conference_Location

Monterey, CA

ISSN

1550-8781

Print_ISBN

978-1-4244-7437-0

Electronic_ISBN

1550-8781

Type

conf

DOI

10.1109/CSICS.2010.5619646

Filename

5619646