• DocumentCode
    2819902
  • Title

    Analysis of single event effects at grazing angle

  • Author

    Campbell, A.B. ; Musseau, O. ; Ferlet-Cavrois, V. ; Stapor, W.J. ; McDonald, P.T.

  • Author_Institution
    Naval Res. Lab., Washington, DC, USA
  • fYear
    1997
  • fDate
    15-19 Sep 1997
  • Firstpage
    528
  • Lastpage
    536
  • Abstract
    Investigation of single event effects at grazing angle by both charge collection and multiple bit upset measurements evidences modified collection mechanisms with charge transfer between adjacent reverse biased structures
  • Keywords
    integrated circuit testing; ion beam effects; charge collection; charge transfer; grazing angle; heavy ion irradiation; integrated circuit; multiple bit upset; reverse biased structure; single event effect; CMOS technology; Charge transfer; Current measurement; Integrated circuit measurements; Ion accelerators; Ionization; Isolation technology; Laboratories; Random access memory; Space charge;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
  • Conference_Location
    Cannes
  • Print_ISBN
    0-7803-4071-X
  • Type

    conf

  • DOI
    10.1109/RADECS.1997.698992
  • Filename
    698992