DocumentCode
2819902
Title
Analysis of single event effects at grazing angle
Author
Campbell, A.B. ; Musseau, O. ; Ferlet-Cavrois, V. ; Stapor, W.J. ; McDonald, P.T.
Author_Institution
Naval Res. Lab., Washington, DC, USA
fYear
1997
fDate
15-19 Sep 1997
Firstpage
528
Lastpage
536
Abstract
Investigation of single event effects at grazing angle by both charge collection and multiple bit upset measurements evidences modified collection mechanisms with charge transfer between adjacent reverse biased structures
Keywords
integrated circuit testing; ion beam effects; charge collection; charge transfer; grazing angle; heavy ion irradiation; integrated circuit; multiple bit upset; reverse biased structure; single event effect; CMOS technology; Charge transfer; Current measurement; Integrated circuit measurements; Ion accelerators; Ionization; Isolation technology; Laboratories; Random access memory; Space charge;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
Conference_Location
Cannes
Print_ISBN
0-7803-4071-X
Type
conf
DOI
10.1109/RADECS.1997.698992
Filename
698992
Link To Document