DocumentCode
2819965
Title
An mHEMT Q-Band Integrated LNA and Vector Modulator MMIC
Author
Lynch, J. ; Traut, F.A. ; Benson, K. ; Tshudy, R.
Author_Institution
Hittite Microwave Corp., Chelmsford, MA, USA
fYear
2010
fDate
3-6 Oct. 2010
Firstpage
1
Lastpage
4
Abstract
We present a Q-band high performance integrated LNA and vector modulator MMIC. The overall MMIC shows a maximum gain of 11 dB at 44 GHz. Full 360-degree phase coverage and a maximum attenuation range of over 40 dB has been achieved. With software calibration, we have demonstrated phase steps as low as 0.4 degrees and amplitude steps of 0.06 dB. An overall noise figure for the integrated MMIC of 3.5 dB has been measured. The results show the excellent performance and high integration level possible with mHEMT technology at millimeter-wave frequencies. To our knowledge, this is the first reported single- chip integration of an LNA and vector modulator at Q-band.
Keywords
HEMT circuits; MMIC amplifiers; low noise amplifiers; Q-band integrated LNA; mHEMT; phase coverage; vector modulator MMIC; Frequency modulation; MMICs; Noise; Performance evaluation; Resistance; mHEMTs;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010 IEEE
Conference_Location
Monterey, CA
ISSN
1550-8781
Print_ISBN
978-1-4244-7437-0
Electronic_ISBN
1550-8781
Type
conf
DOI
10.1109/CSICS.2010.5619652
Filename
5619652
Link To Document